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Simon Sze

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Taiwanese-American electrical engineer (1936–2023)
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In this Chinese name, the family name is Sze (Shi).

Simon Sze
施敏
Born(1936-03-21)21 March 1936
Nanjing, Jiangsu, China
Died6 November 2023(2023-11-06) (aged 87)
CitizenshipTaiwan
United States
Alma materNational Taiwan University (BS)
University of Washington (MS)
Stanford University (PhD)
Known forFloating-gate MOSFET
AwardsJ. J. Ebers Award (1991)
IEEE Celebrated Member (2017)
Future Science Prize (2021)
Scientific career
FieldsElectronic engineering
InstitutionsNational Yang Ming Chiao Tung University

Simon Min Sze, or Shi Min (Chinese: 施敏; pinyin: Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.

Early life and education

Simon Min Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963.

Career and research

Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, now widely used in non-volatile semiconductor memory devices. He wrote and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field.

Death

Simon Sze died on 6 November 2023, at the age of 87.

Recognition

Bibliography

References

  1. "In memory of Academician Simon M. Sze". National Yang Ming Chiao Tung University. 14 November 2023. Retrieved 19 December 2023.
  2. D. Kahng and S. M. Sze, A floating-gate and its application to memory devices, The Bell System Technical Journal, 46, #4 (1967), pp. 1288–1295.
  3. "Simon Sze Obituary (1936–2023) - Walnut Creek, CA - San Francisco Chronicle". Legacy.com. Retrieved 8 November 2023.
  4. Tsai, Yi-Chia; Magyari-Köpe, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M. (2019). "Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold". IEEE Journal of the Electron Devices Society. 7: 322–328. doi:10.1109/JEDS.2019.2897167.
  5. Electron Devices Society J.J. Ebers Award, web page at the IEEE, accessed 11-I-2007.
  6. "Simon M. Sze". Academia Sinica. Retrieved 19 December 2023.
  7. "Dr. Simon M. Sze". United States National Academy of Engineering. Retrieved 19 December 2023.
  8. Dr. Simon Min Sze wins the Future Science Prize
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